march 2010 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 www.fairchildsemi.com 1 FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet 20 v, 4.7 a, 50 m ? features ? max r ds(on) = 50 m ? at v gs = 4.5 v, i d = 2 a ? max r ds(on) = 60 m ? at v gs = 2.5 v, i d = 2 a ? max r ds(on) = 72 m ? at v gs = 1.8 v, i d = 1 a ? max r ds(on) = 93 m ? at v gs = 1.5 v, i d = 1 a ? occupies only 1.0 mm 2 of pcb area. less than 30% of the area of 2x2 bga ? ultra-thin package : less than 0.4 mm height when mounted to pcb ? hbm esd protection level > 3200v (note3) ? rohs compliant general description designed on fairchild's advanced 1.5 v powertrench ? process with state of the art "fine pitch" thin wlcsp packaging process, the FDZ372NZ minimizes both pcb space and r ds(on) . this advanced wlcsp mosfet embodies a breakthrough in packaging technology which enabl es the device to combine excellent thermal transfer charac teristics, ultra-low profile packaging, low gate charge, and low r ds(on) . applications ? battery management ? load switch ? battery protection bottom top d s s g pin 1 wl-csp 1.0x1.0 thin pin 1 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 20 v v gs gate to source voltage 8 v i d drain current -continuous t a = 25 c (note 1a) 4.7 a -pulsed 12 p d power dissipation t a = 25 c (note 1a) 1.7 w power dissipation t a = 25 c (note 1b) 0.5 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 75 c/w r ja thermal resistance, junction to ambient (note 1b) 260 device marking device package reel size tape width quantity l FDZ372NZ wl-csp 1.0x1.0 thin 7 ?? 8 mm 5000 units
FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 18 mv / c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a0.40.71v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/c r ds(on) drain to source on resistance v gs = 4.5 v, i d = 2 a 40 50 m ? v gs = 2.5 v, i d = 2 a 45 60 v gs = 1.8 v, i d = 1 a 53 72 v gs = 1.5 v, i d = 1 a 63 93 v gs = 4.5v, i d = 2 a, t j = 125c 57 81 g fs forward transconductance v ds = 5 v, i d = 4.7 a 22 s c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1 mhz 515 685 pf c oss output capacitance 85 115 pf c rss reverse transfer capacitance 65 100 pf t d(on) turn-on delay time v dd = 10 v, i d = 4.7 a v gs = 4.5 v, r gen = 6 ? 6.2 12 ns t r rise time 3.6 10 ns t d(off) turn-off delay time 26 42 ns t f fall time 5.6 12 ns q g total gate charge v gs = 4.5 v, v dd = 10 v i d = 4.7 a 79.8nc q gs gate to source gate charge 0.8 nc q gd gate to drain ?miller? charge 1.6 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 1.4 a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 4.7 a, di/dt = 100 a/ s 11 20 ns q rr reverse recovery charge 2.6 10 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection esd. no gate overvoltage rating is implied. a. 75 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 260 c/w when mounted on a minimum pad of 2 oz copper.
FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 0 4 8 12 v gs = 2.5 v v gs = 3 v v gs = 1.8 v v gs = 2 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 1.5 v v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 04812 0.5 1.0 1.5 2.0 v gs = 2 v v gs = 1.8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 2.5 v v gs = 3 v v gs = 1.5 v v gs = 4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 2 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0.0 1.5 3.0 4.5 0 50 100 150 200 t j = 125 o c i d = 2 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 0 4 8 12 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 figure 7. 02468 0.0 1.5 3.0 4.5 i d = 4.7 a v dd = 12 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 8 v gate charge characteristics figure 8. 0.01 0.1 1 10 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. gate leakage current vs gate to source voltage 03691215 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v ds = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) figure 10. forward bias safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 20 100 us 10 ms 100 ms dc 1 s 10 s 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 260 o c/w t a = 25 o c figure 11. single pulse maximum power dissipation typical characteristics t j = 25 c unless otherwise noted 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.4 1 10 100 200 p (pk) , peak transient power (w) single pulse r t ja = 260 o c/w t a = 25 o c t, pulse width (sec)
FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 figure 12. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 260 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDZ372NZ n-channel 1.5 v specified powertrench ? thin wl-csp mosfet www.fairchildsemi.com 6 ?2010 fairchild semiconductor corporation FDZ372NZ rev.c2 dimensional outline and pad layout
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